Analysis of the Dependence of Ferroelectric Properties of Strontium Bismuth Tantalate (SBT) Thin Films on the Composition and Process Temperature
- 1 September 1996
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 35 (9S), 4900
- https://doi.org/10.1143/jjap.35.4900
Abstract
Ferroelectric properties, crystal structure and microstructures were examined for various Sr/Bi/Ta atomic ratio strontium bismuth tantalate (SBT) films prepared by metalorganic decomposition at 700 and 800° C. The 20% Sr-deficient and 10% Bi-excess (0.8/2.2/2) composition showed maximum remanent polarization (P r) values for both 700 and 800° C crystallization temperatures. From TEM analysis, the P r dependence on composition variation around the stoichiometric 1/2/2 composition was related to grain size and volume of voids. The effect of postannealing after Pt top electrode fabrication was also studied. On the films prepared at 800° C, postannealing markedly reduced the capacitor shorting rate. This was attributed to recrystallization of the Pt top layer, based on SEM analysis of the Pt layer and the Pt/SBT interface.Keywords
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