Epitaxial, thermodynamically stabilised metal/III-V compound semiconductor interface: NiGa on GaAs (001)

Publisher Website
Google Scholar
Abstract
Crystalline thin films of the intermetallic compound NiGa have been grown by molecular beam epitaxy (MBE) on GaAs (001) substrate. The epitaxied NiGa films are chemically stable and continuous up to at least 500°C and present a resistivity of 10 μΩ cm, quite equivalent to that of the best silicide thin films.