MOCVD-Grown Al0.5In0.5P–Ga0.5In0.5P Double Heterostructure Lasers Optically Pumped at 90 K

Abstract

Undoped Al_0.5In_0.5P–Ga_0.5In_0.5P double heterostructure was grown on (100) GaAs by metalorganic chemical-vapor deposition for the first time. A mirror-like grown surface was obtained. Over ten-times stronger photoluminescence-intensity was gained from the sandwitched Ga_0.5In_0.5P layer, than that from a single epitaxially-grown Ga_0.5In_0.5P-layer on (100) GaAs, indicating that high-quality Al_0.5In_0.5P–Ga_0.5In_0.5P heterointerfaces are formed in the double heterostructure. A lasing action by optical pumping with an argon ion laser was observed in the double heterostructure at 90 K. The observed stimulated emission wavelength was 6470 Å.