Conduction Bands in In1−xAlxP
- 1 September 1970
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 41 (10), 4205-4207
- https://doi.org/10.1063/1.1658438
Abstract
Cathodoluminescence (CL) and x‐ray emission excited by an electron microprobe in In1−xAlxP at ∼300°K have been monitored simultaneously to yield conduction band structure and alloy composition, respectively. Efficient single‐line CL, characteristic of direct bandgap recombination, is observed for x between 0.0 and almost 0.5. Elsewhere, the CL, characteristic of recombination in indirect bandgap semiconductors, is weak. The direct bandgap CL peak has a composition dependence given by hv=1.34+2.23x (eV). The bandgap in the alloy is direct for 0.00≤x<0.44 with a maximum gap of 2.33 eV.Keywords
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