A luminescence band associated with the main electron trap in bulk gallium arsenide
- 15 June 1981
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 38 (12), 1007-1009
- https://doi.org/10.1063/1.92247
Abstract
No abstract availableKeywords
This publication has 8 references indexed in Scilit:
- Effect of electric field on deep-level transients in GaAs and GaPApplied Physics Letters, 1980
- Spectroscopies thermique et optique des niveaux profonds : Application à l'étude de leur relaxation de réseauRevue de Physique Appliquée, 1980
- Effect of oxygen in photoluminescence from chromium-doped semi-insulating GaAsSolid State Communications, 1979
- Phonon assisted tunnel emission of electrons from deep levels in GaAsJournal de Physique, 1979
- Multiphonon, non-radiative transition rate for electrons in semiconductors and insulatorsJournal of Physics C: Solid State Physics, 1978
- Electron traps in bulk and epitaxial GaAs crystalsElectronics Letters, 1977
- Observation of a stokes shift of luminescence from the gallium vacancy-donor complex in GaAsSolid State Communications, 1971
- Evidence for Self-Activated Luminescence in GaAs: The Gallium Vacancy-Donor CenterPhysical Review B, 1968