Contact resistance of nonalloyed metal contacts to Zn-implanted shallow (∼1000 Å) p+ GaAs layers was investigated. Contact resistance as low as 9×10−7 Ωcm2 was achieved for evaporated Ti/Pt/Au contacts to Zn 40 keV and Zn 100 keV double-implanted layers with a peak concentration of 7×1019/cm3.