Gallium-vacancy-dependent diffusion model of ohmic contacts to GaAs
- 31 August 1985
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 28 (8), 823-830
- https://doi.org/10.1016/0038-1101(85)90070-x
Abstract
No abstract availableThis publication has 80 references indexed in Scilit:
- Summary Abstract: Ohmic contacts to GaAs and GaxAl1−xAsJournal of Vacuum Science & Technology B, 1983
- Ohmic contacts to III–V compound semiconductors: A review of fabrication techniquesSolid-State Electronics, 1983
- Alloyed ohmic contacts to GaAsJournal of Vacuum Science and Technology, 1981
- Low resistance ohmic contacts to n- and p-InPSolid-State Electronics, 1981
- Pd/Ge contacts to n-type GaAsSolid-State Electronics, 1980
- Sintered ohmic contacts to n-and p-type GaAsIEEE Transactions on Electron Devices, 1975
- Specific contact resistance of ohmic contacts to gallium arsenideSolid-State Electronics, 1972
- Contact Resistances of Several Metals and Alloys to GaAsJournal of the Electrochemical Society, 1969
- Ohmic contacts for GaAs devicesSolid-State Electronics, 1967
- Alloying to III–V Compound SurfacesJournal of the Electrochemical Society, 1962