Some Properties ofp-Type Gallium Antimonide between 15°K and 925°K

Abstract

Gallium antimonide has been produced by direct combination of gallium and antimony under hydrogen. The product was zone refined and pulled in single crystal form using the Czochralski technique. The product was $p$ type, with resistivities in the range 0.08-0.1 ohm cm. Hall coefficient and resistivity were measured in the temperature range 15-925°K. The slope of the Hall curve at low temperatures yielded the value 0.024 ev for the ionization energy of the carriers. It has been shown necessary to assume an additional acceptor level at 0.037 ev. The room temperature mobility of several samples was about 800 ${\mathrm{cm}}^2$/volt sec. The Hall mobility varied as $T^{-0.87\mathrm{}}$ in the temperature range below room temperature, but the slope changed at about room temperature, and shifted nearly to a $T^{-\frac{3}{2}}$ law in the higher temperature range. The Hall coefficient changed sign at 357°C, as the sample became intrinsic. The mobility ratio was determined from the ratio of the extrapolated extrinsic resistivity and the actual resistivity at the Hall inversion temperature. The value was about 5. The effective mass and intrinsic band gap were estimated from the resistivity data and infrared measurements. The best values were estimated to be $0.20m$ for the effective mass of electrons, $0.39m$ for holes, and 0.80 ev for the intrinsic band gap at 0°K. The best value for room-temperature band gap was taken to be 0.71 ev; the coefficient of band gap with temperature 3×${10}^{-4\mathrm{}}$/°C.