Forecast of VLSI processing—A historical review of the first dry-processed IC

Abstract

The principles of the flat-plate, radial flow plasma reactor and its rapid proliferation into production at Texas Instruments will be reviewed. From this foundation it was logical to attempt the fabrication of a semiconductor integrated circuit by all dry means. An electrically operating double-level metal CCD shift register was fabricated in late 1975 with no liquids other than DI water and photoresist. Silicon, oxide, nitride, and aluminum were all plasma-etched. Photoresist was both developed and removed by novel dry means.