Electronic structure of oxygen thermal donors in silicon
- 15 March 1985
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 46 (6), 559-561
- https://doi.org/10.1063/1.95538
Abstract
The electrical activity of oxygen‐related thermal donors in the model of Ourmazd, Bourret, and Schröter is shown to derive from the shallow, doubly occupied pπ state of a divalent silicon at the center of a cluster of five or more oxygens.Keywords
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