Optical reflectance and electron diffraction studies of molecular-beam-epitaxy growth transients on GaAs(001)
- 12 October 1987
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 59 (15), 1687-1690
- https://doi.org/10.1103/physrevlett.59.1687
Abstract
Optical reflectance and reflectance-difference changes resulting from abrupt changes in As and Ga fluences during molecular-beam-epitaxy growth on GaAs(001) are shown to provide surface chemical information, thereby complementing the structural data available from reflection high-energy electron diffraction. Polarization and spectral dependences suggest that the observed optical anisotropies arise from absorption associated with Ga—Ga surface dimer bonds.Keywords
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