980 nm diode laser for pumping Er/sup 3+/-doped fiber amplifiers
- 1 March 1990
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Photonics Technology Letters
- Vol. 2 (3), 153-155
- https://doi.org/10.1109/68.50872
Abstract
A high-power 980-nm diode laser, whose performance satisfies the requirements for pumping Er/sup 3+/-doped optical fiber amplifiers, is described. The device is grown by atmospheric pressure organometallic vapor-phase epitaxy and contains a strained, step-graded In/sub 0.25/Ga/sub 0.75/As/AlGaAs single-quantum-well active region. The threshold current of the ridge-waveguide laser is 8 mA, and a CW power output of 125 mW with a different quantum efficiency of 59% is demonstrated.Keywords
This publication has 8 references indexed in Scilit:
- Improving the performance of strained InGaAs/AlGaAs single quantum well lasersApplied Physics Letters, 1990
- Theoretical modeling of erbium-doped fiber amplifiers with excited-state absorptionOptics Letters, 1989
- Anomalous dependence of threshold current on stripe width in gain-guided strained-layer InGaAs/GaAs quantum well lasersApplied Physics Letters, 1989
- High-power conversion efficiency in a strained InGaAs/AlGaAs quantum well laserJournal of Applied Physics, 1989
- InGaAs-GaAs strained-layer quantum well buried heterostructure lasers (λ>1 μm) by metalorganic chemical vapor depositionApplied Physics Letters, 1989
- Highly efficient 978 nm diode-pumped erbium-doped fibre amplifier with 24 dB gainElectronics Letters, 1989
- Heterodyne gain and noise measurement of a 1.5 µm resonant semiconductor laser amplifierIEEE Journal of Quantum Electronics, 1986
- Adjustable modules for high-power (over 7.5-mW CS) coupling of diode lasers to single-mode fibersJournal of Lightwave Technology, 1983