Wide-bandwidth, high-efficiency reflection modulators using an unbalanced Fabry–Perot structure

Abstract

A normally-on electroabsorptive multiple quantum well asymmetric Fabry–Perot reflection modulator with an on/off ratio of 22, insertion loss of 3.7 dB, and optical bandwidth of 3.4 nm for a voltage swing of 11 V has been measured. The trade-off between low insertion loss and high contrast in such devices will be discussed in the present letter and is shown to be due to the relative placement in wavelength between the Fabry–Perot resonant mode and the heavy hole exciton position in the multiple quantum well active region.