A theory for filamentation in semiconductor lasers including the dependence of dielectric constant on injected carrier density
- 1 August 1972
- journal article
- Published by Springer Nature in Optical and Quantum Electronics
- Vol. 4 (3), 257-310
- https://doi.org/10.1007/bf02334396
Abstract
No abstract availableKeywords
This publication has 18 references indexed in Scilit:
- RepetitivelyQ-switched light pulses from GaAs injection lasers with tandem double-section stripe geometryIEEE Journal of Quantum Electronics, 1970
- Superlinear dependence of gain on current density in GaAs injection lasersIEEE Journal of Quantum Electronics, 1970
- DOUBLE-HETEROSTRUCTURE INJECTION LASERS WITH ROOM-TEMPERATURE THRESHOLDS AS LOW AS 2300 A/cm2Applied Physics Letters, 1970
- Optimum Stripe Width for Continuous Operation of GaAs Junction LasersJournal of Applied Physics, 1969
- Resonant modes of GaAs junction lasersIEEE Journal of Quantum Electronics, 1969
- Injection-Laser Far-Field Patterns with Gaussian Profiles in the Junction PlaneJournal of Applied Physics, 1968
- Spontane und induzierte Emission in LaserdiodenThe European Physical Journal A, 1967
- Mode confinement and gain in junction lasersIEEE Journal of Quantum Electronics, 1965
- Onset of Stimulated Emission from Gallium Arsenide Semiconductor Optical MasersNature, 1963
- Photon-Radiative Recombination of Electrons and Holes in GermaniumPhysical Review B, 1954