Vapour-phase epitaxial growth of Ga1−xAlxN on sapphire
- 16 December 1976
- journal article
- research article
- Published by Wiley in Physica Status Solidi (a)
- Vol. 38 (2), K111-K113
- https://doi.org/10.1002/pssa.2210380244
Abstract
No abstract availableThis publication has 6 references indexed in Scilit:
- Vapor epitaxy of gallium nitrideJournal of Crystal Growth, 1972
- EPITAXIAL ZnO ON SAPPHIREApplied Physics Letters, 1970
- Properties of Aluminum Nitride Derived from AlCl[sub 3][middle dot]NH[sub 3]Journal of the Electrochemical Society, 1970
- Some Properties of Aluminum NitrideJournal of the Electrochemical Society, 1960
- Crystal Structure of Aluminum NitrideThe Journal of Chemical Physics, 1955
- Das Gitter des Aluminiumnitrids (AlN)The European Physical Journal A, 1924