Chemical bath deposition techniques for and thin films using N,N‐dimethylselenourea as the source of selenide ion are presented. Films of 0.1 to 0.3 μm in thickness of and are obtained in 2 to 10 h depositions at 50°C. The films possess optical bandgap ∼2.63 eV and suffer thermal degradation at temperatures >350°C. They are very resistive, with sheet resistance ∼1012 Ω/□ (∼0.3 μm film, 10 h deposition). The films have sheet resistance ∼103 Ω/□ (∼0.13 μm, 3 h deposition) but undergo thermal degradation at temperatures >200°C. Structure, composition, optical, and electrical characteristics of the films are discussed.