Studies by photothermal deflection spectroscopy of defect formation in a-Si:H
- 1 January 1991
- journal article
- research article
- Published by Taylor & Francis in Philosophical Magazine Part B
- Vol. 63 (1), 143-150
- https://doi.org/10.1080/01418639108224435
Abstract
The optical absorption spectra determined between 2 and 0–6 eV by a combination of optical transmission and photothermal deflection spectroscopy measurements for two a-Si:H samples deposited at 100 and 250°C have been carefully compared in the as-deposited, annealed and light-soaked states. The results as a whole are interpreted in a quantitative way by the recently proposed weak-bond-to-dangling-bond conversion model.Keywords
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