Spin-dependent scattering of conduction electrons in diluted magnetic semiconductors: Hg1−xFexSe

Abstract

Analysis of the quantum oscillations in the transverse magnetoresistance (Shubnikov–de Haas effect) for H∥[110] in oriented single crystals of the compound semiconductor ${\mathrm{Hg}}_{1\mathrm{-}\mathrm{x}}$ ${\mathrm{Fe}}_{\mathrm{x}}$Se with x≃0.03 and x≃0.05 provide evidence for spin-dependent scattering of the conduction electrons. Line-shape fits to the data allow estimates for the difference Dingle temperature δ$T_D$ and the exchange-enhanced effective g factor as a function of temperature and magnetic field. It is concluded that some Fe ions, when incorporated in a HgSe host, exist in a magnetically active state. This result indicates the presence of ${\mathrm{Fe}}^{3+}$ in addition to the ${\mathrm{Fe}}^{2+}$ that might normally be expected in this material.