Luminescence Studies of Oxygen‐Related Defects In Aluminum Nitride
- 1 November 1990
- journal article
- Published by Wiley in Journal of the American Ceramic Society
- Vol. 73 (11), 3238-3246
- https://doi.org/10.1111/j.1151-2916.1990.tb06444.x
Abstract
No abstract availableKeywords
This publication has 30 references indexed in Scilit:
- On the nature of the oxygen-related defect in aluminum nitrideJournal of Materials Research, 1990
- Characterization of the microstructure of sintered AIN by transmission electron microscopyMaterials Science and Engineering: A, 1989
- TEM Analysis of Impurity Induced Microstructures in Sintered Aluminium Nitride CeramicsJournal of the Ceramic Society of Japan, 1988
- Sintering Process of Translucent AlN and Effect of Impurities on Thermal Conductivity of AlN CeramicsJournal of the Ceramic Association, Japan, 1985
- Optical Absorption and Cathodoluminescence of Epitaxial Aluminum Nitride FilmsJapanese Journal of Applied Physics, 1982
- Growth of high purity AlN crystalsJournal of Crystal Growth, 1976
- Luminescent Properties of Energy-Band-Tail States in GaAs:SiPhysical Review B, 1970
- Optical Absorption Edge of AIN Single CrystalsPhysica Status Solidi (b), 1968
- Lattice Thermal Conductivity of Disordered Semiconductor Alloys at High TemperaturesPhysical Review B, 1963
- Luminescence in the System Al[sub 2]O[sub 3]-AINJournal of the Electrochemical Society, 1962