Efficient green electroluminescent diodes by "Double-bin" liquid-phase epitaxy

1 January 1972

journal article
Published by Institute of Electrical and Electronics Engineers (IEEE) in Proceedings of the IEEE

Vol. 60 (9), 1101-1102
https://doi.org/10.1109/PROC.1972.8858

Abstract

Gallium phosphide green-emitting diodes with efficiencies as high as 0.7 percent (at 200 A/cm²) at room temperature have been fabricated with a modified double liquid-phase epitaxial growth method using Czochralski-type liquid encapsulated substrates.

Keywords

ELECTROLUMINESCENCE
EPITAXIAL GROWTH
SUBSTRATES
SEMICONDUCTOR DIODES
NITROGEN
ZINC
GALLIUM COMPOUNDS
FURNACES
RADIATIVE RECOMBINATION
NASA

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