Interpretation of anomalous layers at GaAs n+−n− step junctions
- 15 August 1970
- journal article
- Published by Elsevier in Solid State Communications
- Vol. 8 (16), 1313-1315
- https://doi.org/10.1016/0038-1098(70)90628-9
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
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- On the Measurement of Impurity Atom Distributions in Silicon by the Differential Capacitance TechniqueIBM Journal of Research and Development, 1968
- Etching of Dislocations on the Low-Index Faces of GaAsJournal of Applied Physics, 1965
- Diffusion of Hot and Cold Electrons in Semiconductor BarriersPhysical Review B, 1962