Evolution of deep centers in GaN grown by hydride vapor phase epitaxy
- 15 January 2001
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 78 (3), 332-334
- https://doi.org/10.1063/1.1338970
Abstract
Deep centers and dislocation densities in undoped n GaN, grown by hydride vapor phase epitaxy(HVPE), were characterized as a function of the layer thickness by deep level transient spectroscopy and transmission electron microscopy, respectively. As the layer thickness decreases, the variety and concentration of deep centers increase, in conjunction with the increase of dislocation density. Based on comparison with electron-irradiation induced centers, some dominant centers in HVPE GaN are identified as possible point defects.Keywords
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