Absolute cross section of first-order Raman scattering in GaAs

Abstract

We have complemented previous measurements of the dispersion of the relative cross section for first-order Raman scattering in GaAs by determining the corresponding absolute cross section. The results are fitted with a theory based on a simple band-structure model. Values obtained for the deformation-potential constants of the $E_0$ and $E_1$ gaps corresponding to TO phonons are in excellent agreement with theoretical calculations.