Analyse de la decroissance du photo-courant dans Hg0.7Cd0.3Te entre 4,2 et 300k
- 31 March 1982
- journal article
- Published by Elsevier in Infrared Physics
- Vol. 22 (2), 65-75
- https://doi.org/10.1016/0020-0891(82)90020-3
Abstract
No abstract availableKeywords
This publication has 14 references indexed in Scilit:
- Recombination processes in 3 to 5 μm HgCdTePhysica Status Solidi (b), 1981
- Recombination in cadmium mercury telluride photodetectorsSolid-State Electronics, 1978
- Minority-carrier-lifetime determination in Hg0.68Cd0.32TeJournal of Applied Physics, 1978
- Photo- and cathodoluminescence of Cd0.3Hg0.7Te alloysPhysica Status Solidi (a), 1978
- Resonant Acceptor Level in Zero‐Gap Semiconductors. Single and Multiple Scattering EffectsPhysica Status Solidi (b), 1977
- Electrical and far-infrared optical properties of p-type Hg1−xCdxTeJournal of Applied Physics, 1976
- Acceptor resonances in zero-gap and small-gap semiconductorsPhysical Review B, 1975
- Spherical Model of Shallow Acceptor States in SemiconductorsPhysical Review B, 1973
- Carrier freeze-out and acceptor energies in p-type Hg1−xCdxTeJournal of Physics and Chemistry of Solids, 1972
- Electrical transport properties of semiconducting CdxHg1-xTe alloysSolid State Communications, 1970