Optical rectification due to free carriers in gallium phosphide

Abstract

A strong optical rectification effect is observed in n‐type GaP, peaking near the wavelength range covered by HF lasers. The optical rectification is ascribed to free electrons and is interpreted in terms of the band structure proposed by Lawaetz. The effect can be exploited in the fabrication of fast robust room‐temperature radiation detectors in a wavelength range in which germanium photon drag detectors are not applicable.