Properties of the heterojunction between poly(dithienopyrrole)-poly(vinylchloride) composite and n-doped silicon
- 30 November 1995
- journal article
- Published by Elsevier in Synthetic Metals
- Vol. 75 (1), 61-64
- https://doi.org/10.1016/0379-6779(95)03382-t
Abstract
No abstract availableKeywords
This publication has 7 references indexed in Scilit:
- Electrical characteristics of the junction between the poly(dithienothiophene-dithienopyrrole) conducting copolymer and siliconJournal of Physics D: Applied Physics, 1995
- Electropolymerization of Heterocycles on Poly(Vinylch1oride) Coated ElectrodesMolecular Crystals and Liquid Crystals, 1992
- Electrochemical fabrication of a polypyrrole–polythiophene p–n junction diodeJournal of the Chemical Society, Chemical Communications, 1986
- Metal - Polyacetylene Schottky Barrier DiodesMolecular Crystals and Liquid Crystals, 1984
- Thermal decomposition of o-azidobithienylsJournal of the Chemical Society, Perkin Transactions 1, 1983
- Semiconductor properties of polyacetylene p-(CH)x : n-CdS heterojunctionsJournal of Applied Physics, 1980
- Surface Effects on Metal-Silicon ContactsJournal of Applied Physics, 1968