Precise lattice parameter determination of dislocation-free gallium arsenide—I: X-ray measurements
- 30 April 1976
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 19 (4), 331-334
- https://doi.org/10.1016/0038-1101(76)90031-9
Abstract
No abstract availableKeywords
This publication has 12 references indexed in Scilit:
- High-precision measurements of lattice parameter changes in neutron-irradiated copperJournal of Applied Physics, 1974
- Properties of Sn-doped GaAsJournal of Applied Physics, 1973
- High precision lattice parameter measurements by multiple Bragg reflexion diffractometryProceedings of the Royal Society of London. Series A. Mathematical and Physical Sciences, 1969
- Strain Compensation in Silicon by Diffused ImpuritiesJournal of the Electrochemical Society, 1969
- Effect of Carbon on the Lattice Parameter of SiliconJournal of Applied Physics, 1968
- Annealing and Arsenic Overpressure Experiments on Defects in Gallium ArsenideJournal of Applied Physics, 1966
- Phase extent of gallium arsenide determined by the lattice constant and density methodActa Crystallographica, 1965
- Length Change of Electron-Irradiated GermaniumPhysical Review Letters, 1964
- Precision lattice constant determinationActa Crystallographica, 1960
- Notizen: Herstellung von InAs- und GaAs-EinkristallenZeitschrift für Naturforschung A, 1956