Preparation and properties of III-V nitride thin films

Abstract

Thin films of III‐V nitride semiconductors (AlN, GaN, InN), mixed‐crystalline films (Al_xIn_1−xN), and multilayered films (GaN/InN)_n were grown by rf magnetron sputtering at low substrate temperatures below 500 °C. These films were characterized by x‐ray diffraction, Raman scattering, optical absorption, and electrical measurements; it was proved that they have high crystal quality comparable to the previously reported data obtained by other growth methods. Dependence of the band‐gap energy of Al_xIn_1−xN on composition x was determined. Multilayered films of (GaN/InN) were prepared for the first time; these films showed the characteristic diffusion property to make an ordered‐alloy superlattice.