Low pressure synthesis of bulk, polycrystalline gallium nitride
- 13 January 1997
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 70 (2), 179-181
- https://doi.org/10.1063/1.118350
Abstract
Thick films of polycrystalline GaN were grown at low pressures by direct reaction of atomic nitrogen with liquid Ga without the presence of a substrate. The crystals were confirmed to be wurtzitic GaN by x-ray diffraction, transmission electron microscopy, Raman spectroscopy, and elemental analysis. Photoluminescence spectra showed near band edge peaks and broad yellow band emission at both 298 and 10 K. The results show that atomic nitrogen is an attractive alternative to high pressure for the saturation of liquid gallium with nitrogen for the synthesis of bulk GaN.
Keywords
This publication has 9 references indexed in Scilit:
- Low-temperature luminescence study of GaN films grown by MBESemiconductor Science and Technology, 1996
- Shallow donors in GaN—The binding energy and the electron effective massSolid State Communications, 1995
- Optical phonons of hexagonal and cubic GaN studied by infrared transmission and Raman spectroscopyApplied Physics Letters, 1995
- GaN thin films deposited via organometallic vapor phase epitaxy on α(6H)–SiC(0001) using high-temperature monocrystalline AlN buffer layersApplied Physics Letters, 1995
- Photoluminescence investigation of GaN films grown by metalorganic chemical vapor deposition on (100) GaAsJournal of Applied Physics, 1995
- GaN, AlN, and InN: A reviewJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1992
- Raman scattering and x-ray-absorption spectroscopy in gallium nitride under high pressurePhysical Review B, 1992
- High pressure thermodynamics of GaNJournal of Crystal Growth, 1984
- Fundamental energy gap of GaN from photoluminescence excitation spectraPhysical Review B, 1974