Epitaxial Growth of CuGaS2 by Metalorganic Chemical Vapor Deposition
- 1 July 1987
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 26 (7A), L1107
- https://doi.org/10.1143/jjap.26.l1107
Abstract
CuGaS2 epitaxial layers have been grown on GaAs and GaP substrates by metalorganic chemical vapor deposition for the first time, using cyclopentadienyl(triethylphosphine)copper(I), triethylgallium and hydrogen sulfide (or diethylsulfide) as source materials. The surface morphology and growth orientation are studied. The grown layers have shown green photoluminescence at low temperature.Keywords
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