Enhanced luminescence efficiency due to exciton localization in self-assembled InGaN/GaN quantum dots
- 8 February 2000
- journal article
- Published by Elsevier in Solid State Communications
- Vol. 113 (9), 495-498
- https://doi.org/10.1016/s0038-1098(99)00531-1
Abstract
No abstract availableThis publication has 18 references indexed in Scilit:
- Violet InGaN/GaN/AlGaN-Based Laser Diodes Operable at 50°C with a Fundamental Transverse ModeJapanese Journal of Applied Physics, 1999
- Origin of Luminescence from InGaN DiodesPhysical Review Letters, 1999
- InGaN-based violet laser diodesSemiconductor Science and Technology, 1999
- Effective band gap inhomogeneity and piezoelectric field in InGaN/GaN multiquantum well structuresApplied Physics Letters, 1998
- Time-resolved spectroscopy of InxGa1−xN/GaN multiple quantum wells at room temperatureApplied Physics Letters, 1998
- Role of localized and extended electronic states in InGaN/GaN quantum wells under high injection, inferred from near-field optical microscopyApplied Physics Letters, 1998
- Theory of Threading Edge and Screw Dislocations in GaNPhysical Review Letters, 1997
- Role of self-formed InGaN quantum dots for exciton localization in the purple laser diode emitting at 420 nmApplied Physics Letters, 1997
- InAs quantum boxes: Highly efficient radiative traps for light emitting devices on SiApplied Physics Letters, 1996
- Blue and green electroluminescence from MBE grown GaN/InGaN heterostructuresElectronics Letters, 1996