Luminescence from InAsGaSb superlattices
- 31 July 1981
- journal article
- Published by Elsevier in Solid State Communications
- Vol. 39 (1), 79-82
- https://doi.org/10.1016/0038-1098(81)91051-6
Abstract
No abstract availableKeywords
This publication has 12 references indexed in Scilit:
- Alloy Clustering in-GaAs Quantum-Well HeterostructuresPhysical Review Letters, 1980
- Summary Abstract: Optical characterization of interface disorder in multiquantum well GaAs–AlxGa1−xAs superlattice structuresJournal of Vacuum Science and Technology, 1980
- Luminescence studies of optically pumped quantum wells in GaAs-multilayer structuresPhysical Review B, 1980
- Spin-dependent recombination in GaAsPhysical Review B, 1980
- Quantum-well heterostructure lasersIEEE Journal of Quantum Electronics, 1980
- X-ray diffraction study of interdiffusion and growth in (GaAs)n(AlAs)m multilayersJournal of Applied Physics, 1980
- Semiconductor superlattices in high magnetic fieldsJournal of Magnetism and Magnetic Materials, 1979
- Optical absorption of In1−xGaxAsGaSb1−yAsy superlatticesSolid State Communications, 1978
- InAs-GaSb superlattice energy structure and its semiconductor-semimetal transitionPhysical Review B, 1978
- Crystal growth kinetics in (GaAs)n−(AlAs)m superlattices deposited by molecular beam epitaxyJournal of Crystal Growth, 1978