Wide-range oxygen doping of
- 1 August 1993
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 48 (5), 3531-3533
- https://doi.org/10.1103/physrevb.48.3531
Abstract
The high-temperature superconductor has been doped with oxygen at pressures ranging from a few μbar to 4 kbar. The doping is reversible by heat treatment in air at ambient pressure. Electrical-resistivity and infrared-optical-transmission measurements indicate that the carrier density increases monotonically with the oxygen annealing pressure. The superconductor transition goes through a maximum near 90 K and can be reduced by at least 30 K on both sides of the doping curve. In the oxygen-rich material the resistivity in the a-b plane exhibits a superlinear behavior while the c-axis resistivity shows a positive slope in the temperature dependence.
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