A method of formation of thin oxide films on silicon in a microwave magnetoactive oxygen plasma
- 11 November 1975
- journal article
- Published by IOP Publishing in Journal of Physics D: Applied Physics
- Vol. 8 (16), L195-L197
- https://doi.org/10.1088/0022-3727/8/16/002
Abstract
The possibility of formation of thin oxide films on silicon in a microwave magnetoactive oxygen plasma at pressures of 5*10-5-1 Torr is described, and the corresponding experimental results are presented.Keywords
This publication has 1 reference indexed in Scilit:
- Silicon Oxidation in an Oxygen Plasma Excited by MicrowavesJournal of Applied Physics, 1965