Enhancement-mode ion-implanted InP f.e.t.s

Abstract

Planar enhancement-mode InP f.e.t.s have been fabricated through the use of ion implantation and subsequent electron-beam lithography. Noise figures of 3.2 and 2.6 dB were achieved at 8 GHz with associated gains of 6.4 and 4.7 dB, respectively.