Magnetic easy axis randomly in-plane oriented barium hexaferrite thin film media

Abstract

High coercivity, c-axis randomly in-plane oriented barium hexaferrite thin films have been successfully fabricated by using conventional rf diode sputtering and post-deposition annealing. Coercivities as high as 4100 Oe have been achieved. Ms, Sq, S*, SFD, and SFDr reach the values of about 270 emu/cc, 0.63, 0.90, 0.12, and 0.084, respectively. CoTi doping not only reduces the coercivity, but also reduces the grain size and improves the c-axis in-plane orientation. The composition of doped films can be controlled through different diffusion processes. In this way coercivities in a range between several hundred oersteds and 4000 Oe can be easily obtained.