Direct display of electron back tunneling in MNOS memory capacitors

Abstract

Direct observation of back tunneling in MNOS requires the direct and continuous display of the charge previously injected into the insulator. A new experimental technique having such a feature is presented. It is characterized by its simultaneous and direct measurements of both the change in charge in the insulator and the corresponding change in the device's flat‐band voltage. Charge loss via back tunneling in devices of different tunnel‐oxide thicknesses is presented.