Application of Microwave Reflection Technique to the Measurement of Transient and Quiescent Electrical Conductivity of Silicon
- 1 September 1969
- journal article
- research article
- Published by AIP Publishing in Review of Scientific Instruments
- Vol. 40 (9), 1137-1141
- https://doi.org/10.1063/1.1684180
Abstract
A microwave reflection technique for measuring both the transient and quiescent electrical conductivity of semiconductors in a temperature range from 4.2 to 450 K is described. This technique eliminates the difficulties due to non‐Ohmic contacts when making electrical measurements on semiconductors, particularly silicon.Keywords
This publication has 3 references indexed in Scilit:
- Recombination Lifetimes in High-Purity Silicon at Low TemperaturesJournal of Applied Physics, 1969
- Charge carrier inertia in semiconductorsProceedings of the IEEE, 1964
- Microwave Observation of the Collision Frequency of Electrons in GermaniumPhysical Review B, 1953