Valence Charge Density in Indium Antimonide
- 29 September 1975
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 35 (13), 858-860
- https://doi.org/10.1103/physrevlett.35.858
Abstract
Nine x-ray structure factors have been accurately measured in good-quality InSb single crystals and compared with various model calculations of the valence-electron charge distribution. Excellent agreement is obtained with a model based on tetrahedral distortion and ionic charge transfer, whereas Phillips's bond-charge model gave the poorest fit of all.Keywords
This publication has 8 references indexed in Scilit:
- On the experimental electron distribution in siliconSolid State Communications, 1974
- Pseudopotential Calculations of Electronic Charge Densities in Seven SemiconductorsPhysical Review B, 1971
- X-Ray Investigation of Bond-Charge Density in Gallium ArsenidePhysical Review B, 1971
- Covalent Bond in Crystals. I. Elements of a Structural TheoryPhysical Review B, 1968
- The covalent bond in diamondProceedings of the Royal Society of London. Series A. Mathematical and Physical Sciences, 1967
- Anharmonic vibration and forbidden reflexions in silicon and germaniumProceedings of the Royal Society of London. Series A. Mathematical and Physical Sciences, 1967
- On the influence of binding electrons on X-ray intensitiesActa Crystallographica, 1960
- Die Röntgeninterferenzen an Diamant als wellenmechanisches Problem. Teil IAnnalen der Physik, 1936