Vacancies and Dislocation Loops in Quenched Crystals of Graphite

Abstract

The distribution of vacancies and dislocation loops in quenched graphite has been studied by etching and decorating individual vacancies. Quenching in inert gases from 3100°C introduced less than 10−8 vacancies per atom, and no dislocation loops. After quenching in vacuo from 3100°C, large portions of the crystals contained less than 10−10 vacancies per atom, but most peripheral regions contained an abundance of vacancies and dislocation loops. A probable mechanism for vacancy injection and subsequent coagulation has been deduced. It is concluded that the energy of vacancy formation in graphite is larger than 6.6 eV.