Amorphous thickness dependence in the transition to single crystal induced by laser pulse
- 3 April 1978
- journal article
- Published by Elsevier in Physics Letters A
- Vol. 65 (5-6), 430-432
- https://doi.org/10.1016/0375-9601(78)90461-9
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
- Surface structure changes by laser pulses in siliconPhysics Letters A, 1977
- Visible interference effects in silicon caused by high-current–high-dose implantationApplied Physics Letters, 1976
- Regrowth behavior of ion-implanted amorphous layers on 〈111〉 siliconApplied Physics Letters, 1976
- Structural, Optical, and Electrical Properties of Amorphous Silicon FilmsPhysical Review B, 1970