Vertical cavity violet light emitting diode incorporating an aluminum gallium nitride distributed Bragg mirror and a tunnel junction
- 16 November 2001
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 79 (22), 3720-3722
- https://doi.org/10.1063/1.1415405
Abstract
We have designed and implemented a vertical cavity violet light emitting diode which features an optical resonator composed of an in situ grown GaN/AlGaN DBR and a high reflectivity dielectric mirror. The active InGaN MQW medium is grown directly atop the AlGaN DBR and the structure includes an intracavity lateral current spreading layer based on a InGaN/GaN tunnel junction. Electroluminescence shows directional emission, with modal linewidths as narrow as 0.6 nm.
Keywords
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