Alloyed tin-gold ohmic contacts to n-type indium phosphide
- 31 October 1981
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 24 (10), 907-913
- https://doi.org/10.1016/0038-1101(81)90111-8
Abstract
No abstract availableKeywords
This publication has 13 references indexed in Scilit:
- Ohmic contacts to InPInternational Journal of Electronics, 1979
- Ohmic contacts on indium phosphidePhysica Status Solidi (a), 1978
- Thin film interdiffusion of Au and Sn at room temperatureJournal of the Less Common Metals, 1977
- Room-temperature cw operation of GaInAsP/InP double-heterostructure diode lasers emitting at 1.1 μ mApplied Physics Letters, 1976
- Ideal ohmic contacts to InPElectronics Letters, 1975
- Sperrfreie kontakte an indiumphosphidSolid-State Electronics, 1973
- Au - (n-type) InP Schottky barriers and their use in determining majority carrier concentrations in n-type InPJournal of Physics D: Applied Physics, 1973
- X-ray analysis of sputtered films of beta-tantalum and body-centered cubic tantalumThin Solid Films, 1972
- Auger electron spectroscopySurface Science, 1971
- Ohmic contacts for GaAs devicesSolid-State Electronics, 1967