Observation of metal–oxide–semiconductor transistor operation using scanning capacitance microscopy
- 11 October 1999
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 75 (15), 2319-2321
- https://doi.org/10.1063/1.125002
Abstract
We report scanning capacitance microscopy (SCM) images of a working p-channel metal–oxide–semiconductor field-effect transistor (P-MOSFET) during device operation. Independent bias voltages were applied to the source/gate/drain/well regions of the MOSFET during SCM imaging, and the effect of these voltages on the SCM images is discussed.Keywords
This publication has 9 references indexed in Scilit:
- Quantification of scanning capacitance microscopy imaging of the pn junction through electrical simulationApplied Physics Letters, 1999
- Challenges in hardening technologies using shallow-trench isolationIEEE Transactions on Nuclear Science, 1998
- Scanning capacitance microscopy imaging of threading dislocations in GaN films grown on (0001) sapphire by metalorganic chemical vapor depositionApplied Physics Letters, 1998
- Scanning capacitance spectroscopy: An analytical technique for pn-junction delineation in Si devicesApplied Physics Letters, 1998
- Nanopotentiometry: Local potential measurements in complementary metal–oxide–semiconductor transistors using atomic force microscopyJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1998
- Scanning capacitance microscopy applied to two-dimensional dopant profiling of semiconductorsMaterials Science and Engineering B, 1997
- Quantitative two-dimensional dopant profiling of abrupt dopant profiles by cross-sectional scanning capacitance microscopyJournal of Vacuum Science & Technology A, 1996
- Quantitative scanning capacitance microscopy analysis of two-dimensional dopant concentrations at nanoscale dimensionsJournal of Electronic Materials, 1996
- Scanning capacitance microscopy measurements and modeling: Progress towards dopant profiling of siliconJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1996