THE NITROGEN ISOELECTRONIC TRAP IN PHOSPHORUS-RICH GALLIUM ARSENIDE PHOSPHIDE

Abstract

The localization energy of excitons at N isoelectronic substituents in GaAs_xP_1−x has been determined from optical absorption spectra for x ≲ 0.2. The results indicate that the binding energy of the N‐induced electron state associated with the X₁ conduction band minima in GaAs may be relatively large, ∼0.08 eV. However, this state is still more than 0.3 eV above the lowest minimum at Γ_1c. It is likely that there is no bound state associated directly with the Γ₁ conduction band minimum.