Gallium arsenide films on recrystallized germanium films

Abstract

Germanium films deposited on tungsten/graphite substrates have been recrystallized by a unidirectional solidification technique. Gallium arsenide films deposited on recrystallized germanium have elogated grains with a strong {111} preferred orientation and are epitaxial with respect to the substrate. The deposited films have a room‐temperature Hall mobility of 600–700 cm²/V sec and electron concentration of (1–3) ×10¹⁷ cm⁻³.