Epitaxial GaAs on Si: Progress and Potential Applications
- 1 January 1987
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
No abstract availableKeywords
This publication has 32 references indexed in Scilit:
- Continuous (300 K) photopumped laser operation of AlxGa1−xAs‐GaAs quantum well heterostructures grown on strained‐layer GaAs on SiApplied Physics Letters, 1987
- Low threshold pulsed and continuous laser oscillation from AlGaAs/GaAs double heterostructures grown by metalorganic chemical vapor deposition on Si substratesApplied Physics Letters, 1987
- Performance of quarter-micron GaAs metal-semiconductor field-effect transistors on Si substratesApplied Physics Letters, 1986
- 14.5% conversion efficiency GaAs solar cell fabricated on Si substratesApplied Physics Letters, 1986
- Study of heteroepitaxial interfaces by atomic resolution electron microscopyJournal of Vacuum Science & Technology B, 1986
- Effect of dislocations on the efficiency of thin-film GaAs solar cells on Si substratesJournal of Applied Physics, 1986
- Growth and properties of GaAs/AlGaAs on nonpolar substrates using molecular beam epitaxyJournal of Applied Physics, 1985
- The theory and practice of dislocation reduction in GaAs and InPJournal of Crystal Growth, 1984
- Growth and Characterization of Epitaxial GaAs on Ge/Si SubstratesMRS Proceedings, 1983
- The status of current understanding of InP and InGaAsP materialsJournal of Crystal Growth, 1981