Photoluminescence intensity of InGaAs/GaAs Strained quantum wells under high magnetic fields
- 31 May 1990
- journal article
- Published by Elsevier in Solid State Communications
- Vol. 74 (8), 687-691
- https://doi.org/10.1016/0038-1098(90)90917-z
Abstract
No abstract availableKeywords
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