Electrical properties of a triode-like silicon vertical-channel JFET

Abstract

A transition from triode-like to pentode-likeI_{d}-V_{d}characteristics is observed in diffusion-type vertical JFET's by varying the channel impurity concentration from 5 × 10¹⁴to 5 × 10¹⁵cm^-3. In calculatedI_{d}-V_{d}characteristics of a low concentration and short-channel JFET, Geurst's theory has been shown to agree qualitatively with the experimental curves. In a triode-like JFET, drain currents show two distinct drain-voltage-dependent regions. It has an exponential dependency when the drain current is less than 0.2 mA . cm^-1. It has annth power depndency on the drain voltage when the drain current is larger than 5 mA . cm^-1. Other important electrical properties are also calculated and compared with experimental data.