Thin-oxide dual-electron-injector annealing studies using conductivity and electron energy-loss spectroscopy
- 15 February 1991
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 69 (4), 2317-2323
- https://doi.org/10.1063/1.348713
Abstract
No abstract availableKeywords
This publication has 19 references indexed in Scilit:
- Oxides grown on textured single-crystal silicon-dependence on process and application of EEPROMsIEEE Transactions on Electron Devices, 1990
- Optical absorption studies of Si implanted SiO2Journal of Electronic Materials, 1990
- Silicon-rich SiO2and thermal SiO2dual dielectric for yield improvement and high capacitanceIEEE Transactions on Electron Devices, 1983
- Dual-electron-injector-structure electrically alterable read-only-memory modeling studiesIEEE Transactions on Electron Devices, 1981
- Electrically-alterable read-only-memory using Si-rich SiO2 injectors and a floating polycrystalline silicon storage layerJournal of Applied Physics, 1981
- Electrically-alterable memory using a dual electron injector structureIEEE Electron Device Letters, 1980
- Observation of amorphous silicon regions in silicon-rich silicon dioxide filmsApplied Physics Letters, 1980
- High current injection into SiO2 from Si rich SiO2 films and experimental applicationsJournal of Applied Physics, 1980
- An electron diffraction study of amorphous silicon oxide filmsJournal of Non-Crystalline Solids, 1979
- Preparation and Some Properties of Chemically Vapor‐Deposited Si‐Rich SiO2 and Si3 N 4 FilmsJournal of the Electrochemical Society, 1978